12
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2007
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Initial Release of Data Sheet
1
Apr. 2009
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Corrected ESD structures to reflect current testing results. Changed HBM from 3A to 1C, p. 2
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Updated Fig. 14, CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal, to better represent
production test signal, p. 8
相关PDF资料
MRF7S21170HR5 IC MOSFET RF N-CHAN NI-880
MRF7S21210HSR5 MOSFET RF N-CH 63W NI-780S
MRF7S27130HSR5 MOSFET RF N-CH 23W NI-780S
MRF7S35015HSR5 MOSFET RF N-CH 15W NI-400S-240
MRF7S35120HSR5 MOSFET RF N-CH 120W NI-780S
MRF7S38010HSR5 MOSFET RF N-CH 2W 30V NI-400S
MRF7S38040HSR5 MOSFET RF N-CH 8W 30V NI-400S
MRF7S38075HSR5 MOSFET RF N-CH 12W 30V NI-780S
相关代理商/技术参数
MRF7S21170HR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21170HR3_07 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S21170HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF7S21170HR3_11 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF7S21170HR3_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF7S21170HR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21170HS 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF7S21170HSR3 功能描述:射频MOSFET电源晶体管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray